Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation 所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。
According the temperature distribution of the high power laser diode array , we design a high efficient water cooler to accelerate the conduction of heat with the circular water in the cooler in order to disperse the heat in the active region of a laser , so we can keep a constant operational temperature . by doing those and solving such problems , we can master the technology of gaining the high duty - cycle high power laser diode array , including the material growth , the making of a laser bar 通过对该项目进行研究，解决高占空比大功率半导体激光器阵列材料生长、管芯制作、器件制作等工艺难点，掌握高占空比大功率半导体激光器阵列的制作关键技术，将激光器工作的脉冲占空比提高到20 ，以适应泵浦nd ： yag固体激光器的要求。
There are many approaches to achieve the purpose , and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure , in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties 有多种途径实现ld光束特性的改善,其中采用多有源区隧道结级联大光腔结构的半导体激光器是既增加有源区等效厚度而又保证ld低阈值电流和高斜率效率等特性的最佳途径之一。
Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances . many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device . reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures 半导体工艺中无意引入的金属杂质的污染会极大损害器件性能，为了将金属杂质从器件的有源区吸除，吸杂技术被广泛的研究，器件尺寸的不断缩小和新的金属化工艺的不断出现更需要能在低温有效吸除的技术。
The heat sources are analyzed in theory and calculated under some hypothesis . a thermal conductive model is built and by solving the model equation , the numerical values of the 1 - active region laser , 2 - active region laser , 3 - active region laser and 4 - active region laser are obtained . the dynamical temperature distribution plots are obtained , too 在一定的假定条件下对其内部的热产生率进行了定量计算，并分别针对一、二、三、四有源区激光器建立了热传导模型，得出数值解，画出激光器内部瞬态温度分布图，推导了激光器连续工作条件。
In chapter one , we make a review of particle acceleration theory and the use in solar corona . in chapter two , first we get the spectrum of synchrotron radiation then obtain the electron energy spectrum . in last chapter , we select the typical solar active region parameter to compare our result to the observation and discuss the acceleration mechanism 本文第一章对粒子加速理论以及目前各种加速理论在太阳日冕中的应用作了介绍；第二章通过理论计算得到同步加速辐射谱以及电子能谱；第三章选取太阳日冕中典型参数，对同步加速辐射加速日冕快电子作了简单讨论。
The effect of a few important geometrical and physical parameters which include the length of the active region , the thickness of the active region , bulk traps , interface traps , on the tft ( thin film transistor ) characteristics of polycrystalline silicon has been investigated by using advanced two dimensional device simulation program medici 摘要利用高级二维器件模拟程序medici分析了多晶矽薄膜晶体管有源区的长度、体内陷阱、界面陷阱、栅氧化层厚度等几何参数及物理参数，并研究了这些参数对薄膜晶体管特性的影响。
The main work can be summed up as follows : firstly , we studied the thermal - field properties of vcsels , and analyzed the influences of current spreading , material parameters and operating conditions on the temperature distributions . secondly , we began with the electrode voltage and calculated the equipotential s distributions , compared the distributions of voltages and current densities in different depths of vcsels , and then studied the influences of the oxide - confining region with different position or thickness , and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density , carrier concentration and temperature in the active region . thirdly , we realized the coupling of electricity , optical and thermal - fields , worked out the threshold voltage , calculated the distributions of the injected current density , carrier concentration and temperature under different offset voltages , and analyzed the impacts of temperature profile and carrier density on the refractive index , fermi levels and optical - field 具体工作可以概括如下：首先，研究了vcsel的热场特性，分析了电流扩展，材料参数和工作条件对于温度分布的影响；其次，从电极电压入手，计算出激光器中的等势线分布，并对不同深度处的电压和电流分布进行比较，研究了高阻区的不同位置和不同厚度、限制层和出射窗口半径的大小对电流密度、载流子浓度和温度分布的影响；再次，实现了电、光、热耦合，求出了阈值电压，计算了不同偏置电压下的电流密度分布、载流子浓度分布和热场分布，分析了温度和载流子浓度变化对折射率、费米能级和光场的影响；最后，给出了考虑n - dbr和双氧化限制层时激光器中的等势线分布，分析了n - dbr和双氧化限制层对vcsel电流密度、载流子浓度、温度和光场分布的影响。
